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Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire

Author

Listed:
  • Lei Liu

    (Nanjing University)

  • Taotao Li

    (Nanjing University)

  • Liang Ma

    (Southeast University)

  • Weisheng Li

    (Nanjing University)

  • Si Gao

    (Nanjing University)

  • Wenjie Sun

    (Nanjing University)

  • Ruikang Dong

    (Southeast University)

  • Xilu Zou

    (Nanjing University)

  • Dongxu Fan

    (Nanjing University)

  • Liangwei Shao

    (Nanjing University)

  • Chenyi Gu

    (Nanjing University)

  • Ningxuan Dai

    (Nanjing University)

  • Zhihao Yu

    (Nanjing University of Posts and Telecommunications)

  • Xiaoqing Chen

    (Northwestern Polytechnical University)

  • Xuecou Tu

    (Nanjing University)

  • Yuefeng Nie

    (Nanjing University)

  • Peng Wang

    (Nanjing University)

  • Jinlan Wang

    (Southeast University)

  • Yi Shi

    (Nanjing University)

  • Xinran Wang

    (Nanjing University)

Abstract

Two-dimensional transition-metal dichalcogenides (TMDs) are of interest for beyond-silicon electronics1,2. It has been suggested that bilayer TMDs, which combine good electrostatic control, smaller bandgap and higher mobility than monolayers, could potentially provide improvements in the energy-delay product of transistors3–5. However, despite advances in the growth of monolayer TMDs6–14, the controlled epitaxial growth of multilayers remains a challenge15. Here we report the uniform nucleation (>99%) of bilayer molybdenum disulfide (MoS2) on c-plane sapphire. In particular, we engineer the atomic terrace height on c-plane sapphire to enable an edge-nucleation mechanism and the coalescence of MoS2 domains into continuous, centimetre-scale films. Fabricated field-effect transistor (FET) devices based on bilayer MoS2 channels show substantial improvements in mobility (up to 122.6 cm2 V−1 s−1) and variation compared with FETs based on monolayer films. Furthermore, short-channel FETs exhibit an on-state current of 1.27 mA μm−1, which exceeds the 2028 roadmap target for high-performance FETs16.

Suggested Citation

  • Lei Liu & Taotao Li & Liang Ma & Weisheng Li & Si Gao & Wenjie Sun & Ruikang Dong & Xilu Zou & Dongxu Fan & Liangwei Shao & Chenyi Gu & Ningxuan Dai & Zhihao Yu & Xiaoqing Chen & Xuecou Tu & Yuefeng N, 2022. "Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire," Nature, Nature, vol. 605(7908), pages 69-75, May.
    • Handle: RePEc:nat:nature:v:605:y:2022:i:7908:d:10.1038_s41586-022-04523-5
    DOI: 10.1038/s41586-022-04523-5
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    Cited by:

    1. Manzhang Xu & Hongjia Ji & Lu Zheng & Weiwei Li & Jing Wang & Hanxin Wang & Lei Luo & Qianbo Lu & Xuetao Gan & Zheng Liu & Xuewen Wang & Wei Huang, 2024. "Reconfiguring nucleation for CVD growth of twisted bilayer MoS2 with a wide range of twist angles," Nature Communications, Nature, vol. 15(1), pages 1-12, December.
    2. Luying Song & Ying Zhao & Bingqian Xu & Ruofan Du & Hui Li & Wang Feng & Junbo Yang & Xiaohui Li & Zijia Liu & Xia Wen & Yanan Peng & Yuzhu Wang & Hang Sun & Ling Huang & Yulin Jiang & Yao Cai & Xue J, 2024. "Robust multiferroic in interfacial modulation synthesized wafer-scale one-unit-cell of chromium sulfide," Nature Communications, Nature, vol. 15(1), pages 1-11, December.
    3. Lutao Li & Junjie Yao & Juntong Zhu & Yuan Chen & Chen Wang & Zhicheng Zhou & Guoxiang Zhao & Sihan Zhang & Ruonan Wang & Jiating Li & Xiangyi Wang & Zheng Lu & Lingbo Xiao & Qiang Zhang & Guifu Zou, 2023. "Colloid driven low supersaturation crystallization for atomically thin Bismuth halide perovskite," Nature Communications, Nature, vol. 14(1), pages 1-8, December.
    4. Zijing Zhao & Zhi Fang & Xiaocang Han & Shiqi Yang & Cong Zhou & Yi Zeng & Biao Zhang & Wei Li & Zhan Wang & Ying Zhang & Jian Zhou & Jiadong Zhou & Yu Ye & Xinmei Hou & Xiaoxu Zhao & Song Gao & Yangl, 2023. "A general thermodynamics-triggered competitive growth model to guide the synthesis of two-dimensional nonlayered materials," Nature Communications, Nature, vol. 14(1), pages 1-11, December.
    5. Xingchen Pang & Yang Wang & Yuyan Zhu & Zhenhan Zhang & Du Xiang & Xun Ge & Haoqi Wu & Yongbo Jiang & Zizheng Liu & Xiaoxian Liu & Chunsen Liu & Weida Hu & Peng Zhou, 2024. "Non-volatile rippled-assisted optoelectronic array for all-day motion detection and recognition," Nature Communications, Nature, vol. 15(1), pages 1-9, December.
    6. Jun Zhou & Guitao Zhang & Wenhui Wang & Qian Chen & Weiwei Zhao & Hongwei Liu & Bei Zhao & Zhenhua Ni & Junpeng Lu, 2024. "Phase-engineered synthesis of atomically thin te single crystals with high on-state currents," Nature Communications, Nature, vol. 15(1), pages 1-10, December.
    7. Mengshi Yu & Congwei Tan & Yuling Yin & Junchuan Tang & Xiaoyin Gao & Hongtao Liu & Feng Ding & Hailin Peng, 2024. "Integrated 2D multi-fin field-effect transistors," Nature Communications, Nature, vol. 15(1), pages 1-11, December.
    8. Lu Li & Qinqin Wang & Fanfan Wu & Qiaoling Xu & Jinpeng Tian & Zhiheng Huang & Qinghe Wang & Xuan Zhao & Qinghua Zhang & Qinkai Fan & Xiuzhen Li & Yalin Peng & Yangkun Zhang & Kunshan Ji & Aomiao Zhi , 2024. "Epitaxy of wafer-scale single-crystal MoS2 monolayer via buffer layer control," Nature Communications, Nature, vol. 15(1), pages 1-9, December.
    9. Chao Chang & Xiaowen Zhang & Weixuan Li & Quanlin Guo & Zuo Feng & Chen Huang & Yunlong Ren & Yingying Cai & Xu Zhou & Jinhuan Wang & Zhilie Tang & Feng Ding & Wenya Wei & Kaihui Liu & Xiaozhi Xu, 2024. "Remote epitaxy of single-crystal rhombohedral WS2 bilayers," Nature Communications, Nature, vol. 15(1), pages 1-7, December.

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