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Observation of conducting filament growth in nanoscale resistive memories

Author

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  • Yuchao Yang

    (The University of Michigan)

  • Peng Gao

    (The University of Michigan)

  • Siddharth Gaba

    (The University of Michigan)

  • Ting Chang

    (The University of Michigan)

  • Xiaoqing Pan

    (The University of Michigan)

  • Wei Lu

    (The University of Michigan)

Abstract

Nanoscale resistive switching devices, sometimes termed memristors, have recently generated significant interest for memory, logic and neuromorphic applications. Resistive switching effects in dielectric-based devices are normally assumed to be caused by conducting filament formation across the electrodes, but the nature of the filaments and their growth dynamics remain controversial. Here we report direct transmission electron microscopy imaging, and structural and compositional analysis of the nanoscale conducting filaments. Through systematic ex-situ and in-situ transmission electron microscopy studies on devices under different programming conditions, we found that the filament growth can be dominated by cation transport in the dielectric film. Unexpectedly, two different growth modes were observed for the first time in materials with different microstructures. Regardless of the growth direction, the narrowest region of the filament was found to be near the dielectric/inert-electrode interface in these devices, suggesting that this region deserves particular attention for continued device optimization.

Suggested Citation

  • Yuchao Yang & Peng Gao & Siddharth Gaba & Ting Chang & Xiaoqing Pan & Wei Lu, 2012. "Observation of conducting filament growth in nanoscale resistive memories," Nature Communications, Nature, vol. 3(1), pages 1-8, January.
    • Handle: RePEc:nat:natcom:v:3:y:2012:i:1:d:10.1038_ncomms1737
    DOI: 10.1038/ncomms1737
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    1. Marti Checa & Addis S. Fuhr & Changhyo Sun & Rama Vasudevan & Maxim Ziatdinov & Ilia Ivanov & Seok Joon Yun & Kai Xiao & Alp Sehirlioglu & Yunseok Kim & Pankaj Sharma & Kyle P. Kelley & Neus Domingo &, 2023. "High-speed mapping of surface charge dynamics using sparse scanning Kelvin probe force microscopy," Nature Communications, Nature, vol. 14(1), pages 1-12, December.
    2. Koryazhkina, M.N. & Filatov, D.O. & Shishmakova, V.A. & Shenina, M.E. & Belov, A.I. & Antonov, I.N. & Kotomina, V.E. & Mikhaylov, A.N. & Gorshkov, O.N. & Agudov, N.V. & Guarcello, C. & Carollo, A. & S, 2022. "Resistive state relaxation time in ZrO2(Y)-based memristive devices under the influence of external noise," Chaos, Solitons & Fractals, Elsevier, vol. 162(C).

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