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Manipulating hyperbolic transient plasmons in a layered semiconductor

Author

Listed:
  • Rao Fu

    (University of Chinese Academy of Sciences)

  • Yusong Qu

    (University of Chinese Academy of Sciences)

  • Mengfei Xue

    (Suzhou Laboratory)

  • Xinghui Liu

    (Shanxi University)

  • Shengyao Chen

    (Nankai University)

  • Yongqian Zhao

    (University of Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Runkun Chen

    (State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences)

  • Boxuan Li

    (University of Chinese Academy of Sciences)

  • Hongming Weng

    (University of Chinese Academy of Sciences
    Songshan Lake Materials Laboratory)

  • Qian Liu

    (University of Chinese Academy of Sciences
    Nankai University)

  • Qing Dai

    (University of Chinese Academy of Sciences)

  • Jianing Chen

    (University of Chinese Academy of Sciences
    Songshan Lake Materials Laboratory)

Abstract

Anisotropic materials with oppositely signed dielectric tensors support hyperbolic polaritons, displaying enhanced electromagnetic localization and directional energy flow. However, the most reported hyperbolic phonon polaritons are difficult to apply for active electro-optical modulations and optoelectronic devices. Here, we report a dynamic topological plasmonic dispersion transition in black phosphorus via photo-induced carrier injection, i.e., transforming the iso-frequency contour from a pristine ellipsoid to a non-equilibrium hyperboloid. Our work also demonstrates the peculiar transient plasmonic properties of the studied layered semiconductor, such as the ultrafast transition, low propagation losses, efficient optical emission from the black phosphorus’s edges, and the characterization of different transient plasmon modes. Our results may be relevant for the development of future optoelectronic applications.

Suggested Citation

  • Rao Fu & Yusong Qu & Mengfei Xue & Xinghui Liu & Shengyao Chen & Yongqian Zhao & Runkun Chen & Boxuan Li & Hongming Weng & Qian Liu & Qing Dai & Jianing Chen, 2024. "Manipulating hyperbolic transient plasmons in a layered semiconductor," Nature Communications, Nature, vol. 15(1), pages 1-8, December.
  • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-44971-3
    DOI: 10.1038/s41467-024-44971-3
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    References listed on IDEAS

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