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Tailoring high-energy storage NaNbO3-based materials from antiferroelectric to relaxor states

Author

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  • Mao-Hua Zhang

    (Technical University of Darmstadt
    The Pennsylvania State University)

  • Hui Ding

    (Technical University of Darmstadt)

  • Sonja Egert

    (Technical University of Darmstadt)

  • Changhao Zhao

    (Technical University of Darmstadt)

  • Lorenzo Villa

    (Technical University of Darmstadt)

  • Lovro Fulanović

    (Technical University of Darmstadt)

  • Pedro B. Groszewicz

    (Delft University of Technology)

  • Gerd Buntkowsky

    (Technical University of Darmstadt)

  • Hans-Joachim Kleebe

    (Technical University of Darmstadt)

  • Karsten Albe

    (Technical University of Darmstadt)

  • Andreas Klein

    (Technical University of Darmstadt)

  • Jurij Koruza

    (Technical University of Darmstadt
    Graz University of Technology)

Abstract

Reversible field-induced phase transitions define antiferroelectric perovskite oxides and lay the foundation for high-energy storage density materials, required for future green technologies. However, promising new antiferroelectrics are hampered by transition´s irreversibility and low electrical resistivity. Here, we demonstrate an approach to overcome these problems by adjusting the local structure and defect chemistry, delivering NaNbO3-based antiferroelectrics with well-defined double polarization loops. The attending reversible phase transition and structural changes at different length scales are probed by in situ high-energy X-ray diffraction, total scattering, transmission electron microcopy, and nuclear magnetic resonance spectroscopy. We show that the energy-storage density of the antiferroelectric compositions can be increased by an order of magnitude, while increasing the chemical disorder transforms the material to a relaxor state with a high energy efficiency of 90%. The results provide guidelines for efficient design of (anti-)ferroelectrics and open the way for the development of new material systems for a sustainable future.

Suggested Citation

  • Mao-Hua Zhang & Hui Ding & Sonja Egert & Changhao Zhao & Lorenzo Villa & Lovro Fulanović & Pedro B. Groszewicz & Gerd Buntkowsky & Hans-Joachim Kleebe & Karsten Albe & Andreas Klein & Jurij Koruza, 2023. "Tailoring high-energy storage NaNbO3-based materials from antiferroelectric to relaxor states," Nature Communications, Nature, vol. 14(1), pages 1-11, December.
    • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-37060-4
    DOI: 10.1038/s41467-023-37060-4
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    References listed on IDEAS

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    1. Nengneng Luo & Kai Han & Matthew J. Cabral & Xiaozhou Liao & Shujun Zhang & Changzhong Liao & Guangzu Zhang & Xiyong Chen & Qin Feng & Jing-Feng Li & Yuezhou Wei, 2020. "Constructing phase boundary in AgNbO3 antiferroelectrics: pathway simultaneously achieving high energy density and efficiency," Nature Communications, Nature, vol. 11(1), pages 1-10, December.
    2. Hao Pan & Jing Ma & Ji Ma & Qinghua Zhang & Xiaozhi Liu & Bo Guan & Lin Gu & Xin Zhang & Yu-Jun Zhang & Liangliang Li & Yang Shen & Yuan-Hua Lin & Ce-Wen Nan, 2018. "Giant energy density and high efficiency achieved in bismuth ferrite-based film capacitors via domain engineering," Nature Communications, Nature, vol. 9(1), pages 1-8, December.
    3. Zhengqian Fu & Xuefeng Chen & Zhenqin Li & Tengfei Hu & Linlin Zhang & Ping Lu & Shujun Zhang & Genshui Wang & Xianlin Dong & Fangfang Xu, 2020. "Unveiling the ferrielectric nature of PbZrO3-based antiferroelectric materials," Nature Communications, Nature, vol. 11(1), pages 1-8, December.
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