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Dirac-source diode with sub-unity ideality factor

Author

Listed:
  • Gyuho Myeong

    (Korea Advanced Institute of Science and Technology (KAIST))

  • Wongil Shin

    (Korea Advanced Institute of Science and Technology (KAIST))

  • Kyunghwan Sung

    (Korea Advanced Institute of Science and Technology (KAIST))

  • Seungho Kim

    (Korea Advanced Institute of Science and Technology (KAIST))

  • Hongsik Lim

    (Korea Advanced Institute of Science and Technology (KAIST))

  • Boram Kim

    (Korea Advanced Institute of Science and Technology (KAIST))

  • Taehyeok Jin

    (Korea Advanced Institute of Science and Technology (KAIST))

  • Jihoon Park

    (Korea Advanced Institute of Science and Technology (KAIST))

  • Taehun Lee

    (Korea Advanced Institute of Science and Technology (KAIST))

  • Michael S. Fuhrer

    (Monash University)

  • Kenji Watanabe

    (National Institute for Materials Science, Namiki)

  • Takashi Taniguchi

    (National Institute for Materials Science, Namiki)

  • Fei Liu

    (Peking University
    Beijing Advanced Innovation Center for Integrated Circuits)

  • Sungjae Cho

    (Korea Advanced Institute of Science and Technology (KAIST))

Abstract

An increase in power consumption necessitates a low-power circuit technology to extend Moore’s law. Low-power transistors, such as tunnel field-effect transistors (TFETs), negative-capacitance field-effect transistors (NC-FETs), and Dirac-source field-effect transistors (DS-FETs), have been realised to break the thermionic limit of the subthreshold swing (SS). However, a low-power rectifier, able to overcome the thermionic limit of an ideality factor (η) of 1 at room temperature, has not been proposed yet. In this study, we have realised a DS diode based on graphene/MoS2/graphite van der Waals heterostructures, which exhibits a steep-slope characteristic curve, by exploiting the linear density of states (DOSs) of graphene. For the developed DS diode, we obtained η

Suggested Citation

  • Gyuho Myeong & Wongil Shin & Kyunghwan Sung & Seungho Kim & Hongsik Lim & Boram Kim & Taehyeok Jin & Jihoon Park & Taehun Lee & Michael S. Fuhrer & Kenji Watanabe & Takashi Taniguchi & Fei Liu & Sungj, 2022. "Dirac-source diode with sub-unity ideality factor," Nature Communications, Nature, vol. 13(1), pages 1-6, December.
    • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-31849-5
    DOI: 10.1038/s41467-022-31849-5
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    References listed on IDEAS

    as
    1. Yuan Liu & Jian Guo & Enbo Zhu & Lei Liao & Sung-Joon Lee & Mengning Ding & Imran Shakir & Vincent Gambin & Yu Huang & Xiangfeng Duan, 2018. "Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions," Nature, Nature, vol. 557(7707), pages 696-700, May.
    2. Xiaowei Wang & Peng Yu & Zhendong Lei & Chao Zhu & Xun Cao & Fucai Liu & Lu You & Qingsheng Zeng & Ya Deng & Chao Zhu & Jiadong Zhou & Qundong Fu & Junling Wang & Yizhong Huang & Zheng Liu, 2019. "Van der Waals negative capacitance transistors," Nature Communications, Nature, vol. 10(1), pages 1-8, December.
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    Cited by:

    1. Yaoqiang Zhou & Lei Tong & Zefeng Chen & Li Tao & Yue Pang & Jian-Bin Xu, 2023. "Contact-engineered reconfigurable two-dimensional Schottky junction field-effect transistor with low leakage currents," Nature Communications, Nature, vol. 14(1), pages 1-10, December.

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