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Enhanced bulk photovoltaic effect in two-dimensional ferroelectric CuInP2S6

Author

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  • Yue Li

    (University of Science and Technology of China
    University of Science and Technology of China)

  • Jun Fu

    (University of Science and Technology of China
    University of Science and Technology of China)

  • Xiaoyu Mao

    (University of Science and Technology of China
    University of Science and Technology of China)

  • Chen Chen

    (University of Science and Technology of China
    University of Science and Technology of China)

  • Heng Liu

    (University of Science and Technology of China
    University of Science and Technology of China)

  • Ming Gong

    (University of Science and Technology of China
    University of Science and Technology of China)

  • Hualing Zeng

    (University of Science and Technology of China
    University of Science and Technology of China)

Abstract

The photocurrent generation in photovoltaics relies essentially on the interface of p-n junction or Schottky barrier with the photoelectric efficiency constrained by the Shockley-Queisser limit. The recent progress has shown a promising route to surpass this limit via the bulk photovoltaic effect for crystals without inversion symmetry. Here we report the bulk photovoltaic effect in two-dimensional ferroelectric CuInP2S6 with enhanced photocurrent density by two orders of magnitude higher than conventional bulk ferroelectric perovskite oxides. The bulk photovoltaic effect is inherently associated to the room-temperature polar ordering in two-dimensional CuInP2S6. We also demonstrate a crossover from two-dimensional to three-dimensional bulk photovoltaic effect with the observation of a dramatic decrease in photocurrent density when the thickness of the two-dimensional material exceeds the free path length at around 40 nm. This work spotlights the potential application of ultrathin two-dimensional ferroelectric materials for the third-generation photovoltaic cells.

Suggested Citation

  • Yue Li & Jun Fu & Xiaoyu Mao & Chen Chen & Heng Liu & Ming Gong & Hualing Zeng, 2021. "Enhanced bulk photovoltaic effect in two-dimensional ferroelectric CuInP2S6," Nature Communications, Nature, vol. 12(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:12:y:2021:i:1:d:10.1038_s41467-021-26200-3
    DOI: 10.1038/s41467-021-26200-3
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    References listed on IDEAS

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    1. Akash Bhatnagar & Ayan Roy Chaudhuri & Young Heon Kim & Dietrich Hesse & Marin Alexe, 2013. "Role of domain walls in the abnormal photovoltaic effect in BiFeO3," Nature Communications, Nature, vol. 4(1), pages 1-8, December.
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    Cited by:

    1. Longjun Xiang & Hao Jin & Jian Wang, 2024. "Quantifying the photocurrent fluctuation in quantum materials by shot noise," Nature Communications, Nature, vol. 15(1), pages 1-8, December.
    2. Yue Niu & Lei Li & Zhiying Qi & Hein Htet Aung & Xinyi Han & Reshef Tenne & Yugui Yao & Alla Zak & Yao Guo, 2023. "0D van der Waals interfacial ferroelectricity," Nature Communications, Nature, vol. 14(1), pages 1-9, December.
    3. Yinchang Ma & Yuan Yan & Linqu Luo & Sebastian Pazos & Chenhui Zhang & Xiang Lv & Maolin Chen & Chen Liu & Yizhou Wang & Aitian Chen & Yan Li & Dongxing Zheng & Rongyu Lin & Hanin Algaidi & Minglei Su, 2023. "High-performance van der Waals antiferroelectric CuCrP2S6-based memristors," Nature Communications, Nature, vol. 14(1), pages 1-11, December.
    4. Yongheng Zhou & Xin Zhou & Xiang-Long Yu & Zihan Liang & Xiaoxu Zhao & Taihong Wang & Jinshui Miao & Xiaolong Chen, 2024. "Giant intrinsic photovoltaic effect in one-dimensional van der Waals grain boundaries," Nature Communications, Nature, vol. 15(1), pages 1-7, December.

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