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Author Correction: Van der Waals engineering of ferroelectric heterostructures for long-retention memory

Author

Listed:
  • Xiaowei Wang

    (Nanyang Technological University)

  • Chao Zhu

    (Nanyang Technological University)

  • Ya Deng

    (Nanyang Technological University)

  • Ruihuan Duan

    (Nanyang Technological University)

  • Jieqiong Chen

    (Nanyang Technological University)

  • Qingsheng Zeng

    (Nanyang Technological University)

  • Jiadong Zhou

    (Nanyang Technological University)

  • Qundong Fu

    (Nanyang Technological University)

  • Lu You

    (Soochow University)

  • Song Liu

    (Kansas State University)

  • James H. Edgar

    (Kansas State University)

  • Peng Yu

    (Sun Yatsen University)

  • Zheng Liu

    (Nanyang Technological University
    CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza
    Nanyang Technological University)

Abstract

No abstract is available for this item.

Suggested Citation

  • Xiaowei Wang & Chao Zhu & Ya Deng & Ruihuan Duan & Jieqiong Chen & Qingsheng Zeng & Jiadong Zhou & Qundong Fu & Lu You & Song Liu & James H. Edgar & Peng Yu & Zheng Liu, 2021. "Author Correction: Van der Waals engineering of ferroelectric heterostructures for long-retention memory," Nature Communications, Nature, vol. 12(1), pages 1-1, December.
    • Handle: RePEc:nat:natcom:v:12:y:2021:i:1:d:10.1038_s41467-021-23392-6
    DOI: 10.1038/s41467-021-23392-6
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    Cited by:

    1. Dongyang Yang & Jing Liang & Jingda Wu & Yunhuan Xiao & Jerry I. Dadap & Kenji Watanabe & Takashi Taniguchi & Ziliang Ye, 2024. "Non-volatile electrical polarization switching via domain wall release in 3R-MoS2 bilayer," Nature Communications, Nature, vol. 15(1), pages 1-8, December.
    2. Yong Liu & Mingjian Zhang & Zhuan Wang & Jiandong He & Jie Zhang & Sheng Ye & Xiuli Wang & Dongfeng Li & Heng Yin & Qianhong Zhu & Huanwang Jing & Yuxiang Weng & Feng Pan & Ruotian Chen & Can Li & Fen, 2022. "Bipolar charge collecting structure enables overall water splitting on ferroelectric photocatalysts," Nature Communications, Nature, vol. 13(1), pages 1-8, December.
    3. Qingxuan Li & Siwei Wang & Zhenhai Li & Xuemeng Hu & Yongkai Liu & Jiajie Yu & Yafen Yang & Tianyu Wang & Jialin Meng & Qingqing Sun & David Wei Zhang & Lin Chen, 2024. "High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics," Nature Communications, Nature, vol. 15(1), pages 1-9, December.
    4. Sangyong Park & Dongyoung Lee & Juncheol Kang & Hojin Choi & Jin-Hong Park, 2023. "Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In2Se3 for stacked in-memory computing array," Nature Communications, Nature, vol. 14(1), pages 1-10, December.

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