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High-speed III-V nanowire photodetector monolithically integrated on Si

Author

Listed:
  • Svenja Mauthe

    (IBM Research Europe)

  • Yannick Baumgartner

    (IBM Research Europe)

  • Marilyne Sousa

    (IBM Research Europe)

  • Qian Ding

    (ETH Zurich)

  • Marta D. Rossell

    (IBM Research Europe
    Empa, Swiss Federal Laboratories for Materials Science and Technology)

  • Andreas Schenk

    (ETH Zurich)

  • Lukas Czornomaz

    (IBM Research Europe)

  • Kirsten E. Moselund

    (IBM Research Europe)

Abstract

Direct epitaxial growth of III-Vs on silicon for optical emitters and detectors is an elusive goal. Nanowires enable the local integration of high-quality III-V material, but advanced devices are hampered by their high-aspect ratio vertical geometry. Here, we demonstrate the in-plane monolithic integration of an InGaAs nanostructure p-i-n photodetector on Si. Using free space coupling, photodetectors demonstrate a spectral response from 1200-1700 nm. The 60 nm thin devices, with footprints as low as ~0.06 μm2, provide an ultra-low capacitance which is key for high-speed operation. We demonstrate high-speed optical data reception with a nanostructure photodetector at 32 Gb s−1, enabled by a 3 dB bandwidth exceeding ~25 GHz. When operated as light emitting diode, the p-i-n devices emit around 1600 nm, paving the way for future fully integrated optical links.

Suggested Citation

  • Svenja Mauthe & Yannick Baumgartner & Marilyne Sousa & Qian Ding & Marta D. Rossell & Andreas Schenk & Lukas Czornomaz & Kirsten E. Moselund, 2020. "High-speed III-V nanowire photodetector monolithically integrated on Si," Nature Communications, Nature, vol. 11(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:11:y:2020:i:1:d:10.1038_s41467-020-18374-z
    DOI: 10.1038/s41467-020-18374-z
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    Cited by:

    1. Pengyan Wen & Preksha Tiwari & Svenja Mauthe & Heinz Schmid & Marilyne Sousa & Markus Scherrer & Michael Baumann & Bertold Ian Bitachon & Juerg Leuthold & Bernd Gotsmann & Kirsten E. Moselund, 2022. "Waveguide coupled III-V photodiodes monolithically integrated on Si," Nature Communications, Nature, vol. 13(1), pages 1-11, December.
    2. Sandra Benter & Adam Jönsson & Jonas Johansson & Lin Zhu & Evangelos Golias & Lars-Erik Wernersson & Anders Mikkelsen, 2023. "Geometric control of diffusing elements on InAs semiconductor surfaces via metal contacts," Nature Communications, Nature, vol. 14(1), pages 1-8, December.
    3. Fengjing Liu & Xinming Zhuang & Mingxu Wang & Dongqing Qi & Shengpan Dong & SenPo Yip & Yanxue Yin & Jie Zhang & Zixu Sa & Kepeng Song & Longbing He & Yang Tan & You Meng & Johnny C. Ho & Lei Liao & F, 2023. "Lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires," Nature Communications, Nature, vol. 14(1), pages 1-10, December.

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