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The Impact of the Amorphous-to-Crystalline Transition on the Upconversion Luminescence in Er 3+ -Doped Ga 2 O 3 Thin Films

Author

Listed:
  • Yuanlin Liang

    (Institute of Modern Optics & Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology, Nankai University, Tianjin 300071, China)

  • Haisheng Chen

    (Institute of Modern Optics & Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology, Nankai University, Tianjin 300071, China)

  • Dianmeng Dong

    (State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China)

  • Jiaxing Guo

    (Institute of Modern Optics & Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology, Nankai University, Tianjin 300071, China)

  • Xiaona Du

    (Institute of Photoelectric Thin Film Devices and Technology, College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China)

  • Taiyu Bian

    (Institute of Modern Optics & Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology, Nankai University, Tianjin 300071, China)

  • Fan Zhang

    (State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China)

  • Zhenping Wu

    (State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China)

  • Yang Zhang

    (Institute of Modern Optics & Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology, Nankai University, Tianjin 300071, China)

Abstract

Gallium oxide (Ga 2 O 3 ) is an emerging wide bandgap semiconductor promising a wide range of important applications. However, mass production of high-quality crystalline Ga 2 O 3 still suffers from limitations associated with poor reproducibility and low efficiency. Low-temperature-grown amorphous Ga 2 O 3 demonstrates comparable performance with its crystalline counterparts. Lanthanide Er 3+ -doped Ga 2 O 3 (Ga 2 O 3 : Er) possesses great potential for developing light-emitting devices, photodetectors, solid-state lasers, and optical waveguides. The host circumstance can exert a crystal field around the lanthanide dopants and strongly influence their photoluminescence properties. Here, we present a systematical study of the impact of amorphous-to-crystalline transition on the upconversion photoluminescence in Ga 2 O 3 : Er thin films. Through controlling the growth temperature of Ga 2 O 3 : Er films, the upconversion luminescence of crystalline Ga 2 O 3 : Er thin film is strongly enhanced over 100 times that of the amorphous Ga 2 O 3 : Er thin film. Moreover, the variation of photoluminescence reflects the amorphous-to-crystalline transformation of the Ga 2 O 3 : Er thin films. These results will aid further designs of favorable optoelectronic devices integrated with lanthanide-doped Ga 2 O 3 thin films.

Suggested Citation

  • Yuanlin Liang & Haisheng Chen & Dianmeng Dong & Jiaxing Guo & Xiaona Du & Taiyu Bian & Fan Zhang & Zhenping Wu & Yang Zhang, 2024. "The Impact of the Amorphous-to-Crystalline Transition on the Upconversion Luminescence in Er 3+ -Doped Ga 2 O 3 Thin Films," Energies, MDPI, vol. 17(6), pages 1-10, March.
    • Handle: RePEc:gam:jeners:v:17:y:2024:i:6:p:1397-:d:1356902
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