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Stochastic resonance in single-mode semiconductor lasers

Author

Listed:
  • Wang, J.
  • Bai, Y.M.
  • Cao, L.
  • Wu, D.J.
  • Ma, X.Y.

Abstract

Owing to the considerable virtues of semiconductor lasers for applications, they have become the main optical source for fiber communication systems recently. The behavior of stochastic resonance (SR) in direct-modulated semiconductor laser systems is investigated in this article. Considering the carrier and photon noises and the cross-correlation between the two noises, the power spectrum of the photon density and the signal-to-noise ratio (SNR) of the modulated laser system were calculated using the linear approximation method. We found that the SR always appears in the dependence of the SNR upon the bias current density, and is strongly affected by the cross-correlation coefficient of the carrier and photon noises, the frequency of modulation signal and the photon lifetime in the laser cavity. Hence, it is promising to use the SR mechanism to enhance the SNR of direct-modulated semiconductor laser systems and improve the quality of optical communication.

Suggested Citation

  • Wang, J. & Bai, Y.M. & Cao, L. & Wu, D.J. & Ma, X.Y., 2006. "Stochastic resonance in single-mode semiconductor lasers," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 368(1), pages 31-37.
    • Handle: RePEc:eee:phsmap:v:368:y:2006:i:1:p:31-37
    DOI: 10.1016/j.physa.2005.12.064
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