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Flash codes with multibit update for asymmetrical write memory device

Author

Listed:
  • Kenneth Ivanson D. Laurel

    (Ateneo de Manila University, Quezon City, Philippines)

  • Proceso L. Fernandez

    (Ateneo de Manila University, Quezon City, Philippines)

Abstract

A flash code is a coding mechanism used to store and retrieve information in a ?lash memory, which is simply an array of ?lash cells. Because of the write asymmetry property of ?lash cells, a ?lash code has to be designed carefully in order to ef?iciently make use of the limited number of program-erase cycles that the ?lash cells can physically tolerate. From the initial studies on unibit update ?lash codes, more recent researches have introduced the multibit update mechanism for more ef?icient flash codes. In this paper, we propose three different new multibit update flash codes. These ?lash codes were simulated in Java and compared against existing multibit update flash codes using the mean data update count as the main metric for evaluation. The results show that the proposed flash codes are very competitive with the existing multibit update flash codes, with the third proposed new flash code having superior performance for some range of data vector lengths. This indicates that the proposed flash codes make very ef?icient use of the flash memory cells and, thus, may be helpful in extending the lifetime of flash devices.

Suggested Citation

  • Kenneth Ivanson D. Laurel & Proceso L. Fernandez, 2017. "Flash codes with multibit update for asymmetrical write memory device," Journal of Advances in Technology and Engineering Research, A/Professor Akbar A. Khatibi, vol. 3(1), pages 11-18.
    • Handle: RePEc:apb:jaterr:2017:p:11-18
    DOI: 10.20474/jater-3.1.3
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