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Influence Of Plasma Pretreatment In The Formation Of Diamond-Like Carbon Thin Films

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Author Info

  • R. MAHESWARAN

    (Center for Materials Science and Nanodevices, Department of Physics, SRM University, Kattankulathur-603 203, India)

  • SHIVARAMAN RAMASWAMY

    (Nanotechnology Research Center, SRM University, Kattankulathur-603 203, India)

  • OJAS MAHAPATRA

    (Nanotechnology Research Center, SRM University, Kattankulathur-603 203, India)

  • B. PURNACHANDRA RAO

    (Center for Materials Science and Nanodevices, Department of Physics, SRM University, Kattankulathur-603 203, India)

  • C. GOPALAKRISHNAN

    (Nanotechnology Research Center, SRM University, Kattankulathur-603 203, India)

  • D. JOHN THIRUVADIGAL

    ()
    (Center for Materials Science and Nanodevices, Department of Physics, SRM University, Kattankulathur-603 203, India)

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    Abstract

    Plasma-enhanced chemical vapor deposition has been used to synthesize diamond-like carbon (DLC) thin films. High purity argon and methane gases were used as precursors for the fabrication of the DLC films. The influence of plasma pretreatment on the growth of the DLC films has been studied by subjecting one of the substrates to plasma pretreatment prior to deposition of the DLC films, while maintaining the other substrate as the control. The structural properties of the DLC films have been characterized using atomic force microscopy and Raman spectroscopy. The film grown on the pretreated substrate shows a more uniform coating as compared to the film grown on non-pretreated silicon substrate. The results are discussed based on diffusivity of carbon on silicon and the effect of the plasma pretreatment.

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    Bibliographic Info

    Article provided by World Scientific Publishing Co. Pte. Ltd. in its journal Surface Review and Letters.

    Volume (Year): 16 (2009)
    Issue (Month): 06 ()
    Pages: 881-886

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    Handle: RePEc:wsi:srlxxx:v:16:y:2009:i:06:p:881-886

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    Related research

    Keywords: Argon ion; AFM; diamond-like carbon; plasma pretreatment; Raman spectroscopy;

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