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STRUCTURE AND FERROELECTRIC PROPERTIES OF Bi0.95La0.05FeO3 FILM ON INDIUM TIN OXIDE (ITO)/GLASS SUBSTRATE

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Author Info
QIANG GAO () (State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China)
WEI ZHENG (State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China)
Abstract

Bi0.95La0.05FeO3(BLFOx=0.05) film was fabricated on indium tin oxide/glass substrate using a metal organic decomposition method. No secondary phase can be observed in the well crystallized and predominantly (110)-oriented BLFOx=0.05 film. Well-saturated P - E hysteresis loops with the remanent polarization of 60.7 μC/cm2 can be obtained in BLFOx=0.05 film due to the low leakage currents as well as the preferred orientation of the (110) peak. The content of oxygen vacancies in the film is considered to be the dominant factor affecting the asymmetry ferroelectric properties and leakage currents.

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Publisher Info
Article provided by World Scientific Publishing Co. Pte. Ltd. in its journal Surface Review and Letters.

Volume (Year): 16 (2009)
Issue (Month): 04 ()
Pages: 503-506
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Handle: RePEc:wsi:srlxxx:v:16:y:2009:i:04:p:503-506

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Related research
Keywords: Bi0.95La0.05FeO3 film; (ITO)/Glass substrate; ferroelectric;

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This page was last updated on 2009-12-9.


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