LIKUN PAN () (Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, Shanghai, 200062, China) HAIBO LI (Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, Shanghai, 200062, China) ZHUO SUN (Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, Shanghai, 200062, China) CHANGQING SUN (School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore)
Abstract
Cu, Al, and Ti films of ~ 10 nm thickness were deposited on porous silicon (PS) at room temperature using Filtered Cathodic Vacuum Arc system and annealed at 800°C for 10 min in vacuum. The PS layers were obtained by anodization of Si wafer. X-ray photoelectron spectroscopy, photoluminescence (PL), photo-absorption (PA), and X-ray diffraction studies revealed that before annealing just Cu-deposited sample exhibited PL blueshift, PA redshift, and Si-2p level shift due to the Cu diffusion at the surface of PS. While after annealing, Cu- and Ti-deposited samples exhibited obvious PA redshift and Si-2p level shift, which arise from the crystal field variation due to the formation of Cu/Ti silicides at the surface as well as the conduction electronic transportation.
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Article provided by World Scientific Publishing Co. Pte. Ltd. in its journal Surface Review and Letters.