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NONLINEAR OPTICAL RECTIFICATION OF A COUPLING WURTZITE GaN-BASED QUANTUM WELL WITH BUILT-IN ELECTRIC FIELDS

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  • L. ZHANG

    ()
    (Department of Mechanism and Electron, Panyu Polytechnic, Panyu, 511483, People's Republic of China)

Abstract

Taking the strong built-in electric field into consideration, the optical-rectification (OR) coefficient in a nitride semiconductor coupling quantum well (CQW) has been theoretically investigated by using the compact density matrix approach. The electronic eigenstates in a nitride CQW are exactly solved based on the built-in electric field model already constituted in the recent reference. Numerical calculations on the typical GaN/InxGa1-xN CQW are performed. The calculated results reveal that the OR coefficients of the CQW are not monotonic functions of the well width, barrier width, and the doped concentration of the CQW systems but have complicated dependent relations on them. Our calculation shows that a strong OR effect can be obtained in the nitride CQW by choosing optimized structural parameters and a relatively low doped fraction.

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Bibliographic Info

Article provided by World Scientific Publishing Co. Pte. Ltd. in its journal Surface Review and Letters.

Volume (Year): 14 (2007)
Issue (Month): 01 ()
Pages: 151-156

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Handle: RePEc:wsi:srlxxx:v:14:y:2007:i:01:p:151-156

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Keywords: Built-in electric field effect; Wurtzite coupling quantum wells; optical rectification; density matrix approach; 42.65.Ky; 78.67.De;

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