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Spin-polarized transport through a time-periodic non-magnetic semiconductor heterostructure

Author

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  • K. Gnanasekar
  • K. Navaneethakrishnan

Abstract

Spin-dependent Floquet scattering theory is developed to investigate the photon-assisted spin-polarized electron transport through a semiconductor heterostructure in the presence of an external electric field. Spin-dependent Fano resonances and spin-polarized electron transport through a laser irradiated time-periodic non-magnetic heterostructure in the presence of Dresselhaus spin-orbit interaction and a gate-controlled Rashba spin-orbit interaction are investigated. The electric field due to laser along with the spin-orbit interactions help to get spin-dependent Fano resonances in the conductance, whereas the external bias can be appropriately adjusted to get a near 80% spin-polarized electron transmission through heterostructures. The resultant nature of the Floquet scattering depends on the relative strength of these two electric fields. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2006

Suggested Citation

  • K. Gnanasekar & K. Navaneethakrishnan, 2006. "Spin-polarized transport through a time-periodic non-magnetic semiconductor heterostructure," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 53(4), pages 455-461, October.
    • Handle: RePEc:spr:eurphb:v:53:y:2006:i:4:p:455-461
    DOI: 10.1140/epjb/e2006-00404-6
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