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Silicon wet etching: Hillock formation mechanisms and dynamic scaling properties

Author

Listed:
  • Mirabella, D.A.
  • Suárez, G.P.
  • Suárez, M.P.
  • Aldao, C.M.

Abstract

Surface roughening due to anisotropic wet etching of silicon was studied experimentally and modeled using the Monte Carlo method. Simulations were used to determine the consequences of site-dependent detachment probabilities on surface morphology for a one- and two-dimensional substrate models, focusing on the formation mechanisms of etch hillocks. Dynamic scaling properties of the 1D model were also studied. Resorting to the height–height correlation function and the structure factor, it is shown that the model presents conventional and anomalous scaling (faceted) depending on the stability of the hillocks tops. We also found that there is an intermediate regime that cannot be described by the Family–Vicsek or anomalous scaling ansatz.

Suggested Citation

  • Mirabella, D.A. & Suárez, G.P. & Suárez, M.P. & Aldao, C.M., 2014. "Silicon wet etching: Hillock formation mechanisms and dynamic scaling properties," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 395(C), pages 105-111.
  • Handle: RePEc:eee:phsmap:v:395:y:2014:i:c:p:105-111
    DOI: 10.1016/j.physa.2013.09.071
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    References listed on IDEAS

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    1. Mirabella, D.A. & Suárez, M.P. & Aldao, C.M., 2008. "Basic mechanisms for hillock formation during etching," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 387(8), pages 1957-1962.
    2. Dotto, M.E.R & Kleinke, M.U, 2001. "Kinetic roughening in etched Si," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 295(1), pages 149-153.
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