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Structure and magnetic properties of Mn4N thin films synthesized by plasma-based ion implantation

Author

Listed:
  • Vempaire, D.
  • Fruchart, D.
  • Gouttebarron, R.
  • Hlil, E.K.
  • Miraglia, S.
  • Ortega, L.
  • Pelletier, J.

Abstract

Plasma-based ion implantation was used to synthesize the manganese nitride Mn4N by implanting nitrogen in manganese layers first deposited by sputtering assisted by multi-dipolar microwave plasma. The structural characterization of the layer has been performed using X-ray diffraction at grazing incidence and XPS. The magnetic properties have been measured using a SQUID susceptometer. In parallel, a FLAPW method has been used to calculate the theoretical magnetic state of Mn4N. The modeling results are compared with neutron diffraction and magnetization saturation measurements.

Suggested Citation

  • Vempaire, D. & Fruchart, D. & Gouttebarron, R. & Hlil, E.K. & Miraglia, S. & Ortega, L. & Pelletier, J., 2005. "Structure and magnetic properties of Mn4N thin films synthesized by plasma-based ion implantation," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 358(1), pages 136-141.
    • Handle: RePEc:eee:phsmap:v:358:y:2005:i:1:p:136-141
    DOI: 10.1016/j.physa.2005.06.014
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