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Giant persistent photoconductivity induced crossover from strong to weak localization in Si-δ-doped GaAs compensated with Be acceptors

Author

Listed:
  • Friedland, K.-J.
  • Hoerike, M.
  • Hey, R.
  • Shlimak, I.
  • Resnick, L.

Abstract

We present the results of measurements of two-dimensional electron transport in Si-δ-doped GaAs samples compensated with Be acceptors. It is shown that the temperature dependence of longitudinal resistivity Rxx in the interval 1K–100mK is well described by the variable-range-hopping mechanism Rxx(T)=R0exp[(T0/T)1/2] peculiar for strongly localized electrons. Transitional illumination of these samples by a red light causes a persistent photoconductivity (PPC), which is fully determined by irreversible increase of electron mobility. As a result of illumination, parameter T0 decreases which leads to a giant exponential increase of PPC at low temperatures. After high dose of illumination, the temperature dependence of conductivity changes from exponential to logarithmic law, which can be considered as a crossover from strong to weak electron localization.

Suggested Citation

  • Friedland, K.-J. & Hoerike, M. & Hey, R. & Shlimak, I. & Resnick, L., 2001. "Giant persistent photoconductivity induced crossover from strong to weak localization in Si-δ-doped GaAs compensated with Be acceptors," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 302(1), pages 375-381.
    • Handle: RePEc:eee:phsmap:v:302:y:2001:i:1:p:375-381
    DOI: 10.1016/S0378-4371(01)00456-3
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